IanCutress: Appreciate those who saw the video and posted in the comments before I did.IanCutress: It requires additional validation and checking for performance and bugs.
My point is that everybody uses the Android battery temperature reports in their articles, and m… All in all, there should be absolutely no reason to worry about the endurance of the 850 EVO, especially given the endurance ratings Samsung is giving to the 850 EVO (75TB for 120/250GB and 150TB for 500GB/1TB). Only some very extreme workloads could wear out the smaller capacities before the warranty runs out, but the 850 EVO is a wrong drive for such workloads in the first place. While write endurance in client workloads was never truly an issue even with planar TLC NAND, the doubled endurance in TLC V-NAND makes it practically impossible to wear out the drive before it has become totally obsolete. Lifespan with 100GiB of Host Writes per Day with 3x Write Amplification Lifespan with 20GiB of Host Writes per Day with 1.5x Write Amplification However, the estimated total write endurance (which is just 15,260/0.06) suggests that the NAND itself is rated at 2,000 P/E cycles, which would make sense as the number of P/E cycles is usually an even thousand and it's also inline with the increase that the 850 Pro saw (from 3,000 cycles in the 840 Pro to 6,000 cycles). 120GB = 1 P/E cycle) because just going by it puts the endurance at ~2,133 P/E cycles (128/0.06), but that doesn't add up with the raw NAND capacity and total data written. The raw WLC value seems to be based on the user capacity (i.e. It appears that TLC flavor of V-NAND is rated at about 2,000 P/E cycles.
Samsung SSD 850 EVO EnduranceĬhange in Current Wear Leveling Count Value In order to estimate the endurance, I had to find the spot where the increase in 'Raw Data' value decreases the 'Current Value' by one. The 'Current Value' of the WLC SMART value gives the remaining endurance as a percentage (starts from 99), whereas the 'Raw Data' value indicates the number of consumed P/E cycles. Basically I just used Iometer to write 128KB sequential data at queue depth of 1 to the drive while monitoring the Wear Leveling Count (WLC) and Total LBAs Written SMART values. To test endurance, I put the 120GB 850 EVO through our usual endurance test suite. However, endurance was never really an issue with planar MLC NAND except in the enterprise space, so the 850 EVO with its TLC V-NAND offers a much more interesting insight to the capability of 3D NAND technology. We already saw 6,000 P/E cycles in the SSD 850 Pro and an amazing 40,000 P/E cycles in the SSD 845DC Pro, which proved that V-NAND provides substantially better endurance over today's planar NAND nodes. The big question with every new NAND generation is the endurance.
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